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Appearance: Light yellow liquid
Molecular Weight: 287.36
Melting Point: 6 °C(lit.)
Boiling Point: 100 °C0.01 mm Hg(lit.)
Density: 1.3412 g/mL at 25 °C(lit.)
Storage Conditions: below 5° C
Hydrolysis Sensitivity: No reaction with water under neutral conditions
Bis(ethylcyclopentadienyl) ruthenium features high purity (≥99.5%) and extremely low carbon and oxygen impurity content, ensuring uniformity and electrical properties during metal thin film deposition.
Ru(EtCp)₂ maintains structural stability in the mid-temperature range and possesses a moderate vapor pressure, making it ideally suited for ALD and CVD thin film deposition systems.
During the deposition process, Ru(EtCp)₂ produces smooth, pinhole-free ruthenium thin films with controllable film thickness and excellent adhesion.
Compatible with redox reaction systems such as O₂, O₃, NH₃, and H₂O, it is suitable for a variety of equipment types and process requirements.
Bis(ethylcyclopentadienyl) ruthenium is a mainstream precursor for depositing ruthenium metal layers, used in the fabrication of integrated circuits, DRAM electrodes, and logic chip interconnect layers.
Ru(EtCp)₂ can be used in atomic layer deposition to produce high-purity ruthenium and RuO₂ thin films, which are widely used in electrode materials, photovoltaic devices, and hard coatings.
In catalytic reactions and coordination chemistry research, Ru(EtCp)₂ serves as an important organic ruthenium source, providing a reliable raw material for the preparation of metal-organic frameworks (MOFs) and novel catalysts.
Ru(EtCp)₂ is extremely sensitive to air and moisture and should be handled and stored under argon or nitrogen protection.
Light may cause decomposition, so it is recommended to store at a temperature below 5°C.
Wear protective gloves, protective glasses and lab coat when using to avoid direct skin contact.
Do not mix with strong oxidizers to avoid chemical reactions or combustion.
If a leak occurs, clean it up with inert absorbent material (such as diatomaceous earth) in a ventilated environment and dispose of it in accordance with the regulations for organic metal waste.
Compared to traditional Bis(cyclopentadienyl) Ruthenium, Ru(EtCp)₂ offers improved volatility and process stability, making it suitable for ALD applications requiring low-temperature deposition and high uniformity.
2. What substrate materials can Ru(EtCp)₂ be used on?
It is suitable for common semiconductor substrates such as SiO₂, TiN, Al₂O₃, and TaN. It deposits dense films with strong adhesion.
3. How can I determine if Ru(EtCp)₂ meets the required purity standards?
Impurity levels can be measured using ICP-MS or GC-MS. We provide a Certificate of Analysis (COA) and third-party testing reports to verify purity and structural consistency.
For more information or to purchase Bis(Ethylcyclopentadienyl) Ruthenium(Ru(EtCp)2), please feel free to contact us via email or WhatsApp.
Appearance: Light yellow liquid
Molecular Weight: 287.36
Melting Point: 6 °C(lit.)
Boiling Point: 100 °C0.01 mm Hg(lit.)
Density: 1.3412 g/mL at 25 °C(lit.)
Storage Conditions: below 5° C
Hydrolysis Sensitivity: No reaction with water under neutral conditions
Bis(ethylcyclopentadienyl) ruthenium features high purity (≥99.5%) and extremely low carbon and oxygen impurity content, ensuring uniformity and electrical properties during metal thin film deposition.
Ru(EtCp)₂ maintains structural stability in the mid-temperature range and possesses a moderate vapor pressure, making it ideally suited for ALD and CVD thin film deposition systems.
During the deposition process, Ru(EtCp)₂ produces smooth, pinhole-free ruthenium thin films with controllable film thickness and excellent adhesion.
Compatible with redox reaction systems such as O₂, O₃, NH₃, and H₂O, it is suitable for a variety of equipment types and process requirements.
Bis(ethylcyclopentadienyl) ruthenium is a mainstream precursor for depositing ruthenium metal layers, used in the fabrication of integrated circuits, DRAM electrodes, and logic chip interconnect layers.
Ru(EtCp)₂ can be used in atomic layer deposition to produce high-purity ruthenium and RuO₂ thin films, which are widely used in electrode materials, photovoltaic devices, and hard coatings.
In catalytic reactions and coordination chemistry research, Ru(EtCp)₂ serves as an important organic ruthenium source, providing a reliable raw material for the preparation of metal-organic frameworks (MOFs) and novel catalysts.
Ru(EtCp)₂ is extremely sensitive to air and moisture and should be handled and stored under argon or nitrogen protection.
Light may cause decomposition, so it is recommended to store at a temperature below 5°C.
Wear protective gloves, protective glasses and lab coat when using to avoid direct skin contact.
Do not mix with strong oxidizers to avoid chemical reactions or combustion.
If a leak occurs, clean it up with inert absorbent material (such as diatomaceous earth) in a ventilated environment and dispose of it in accordance with the regulations for organic metal waste.
Compared to traditional Bis(cyclopentadienyl) Ruthenium, Ru(EtCp)₂ offers improved volatility and process stability, making it suitable for ALD applications requiring low-temperature deposition and high uniformity.
2. What substrate materials can Ru(EtCp)₂ be used on?
It is suitable for common semiconductor substrates such as SiO₂, TiN, Al₂O₃, and TaN. It deposits dense films with strong adhesion.
3. How can I determine if Ru(EtCp)₂ meets the required purity standards?
Impurity levels can be measured using ICP-MS or GC-MS. We provide a Certificate of Analysis (COA) and third-party testing reports to verify purity and structural consistency.
For more information or to purchase Bis(Ethylcyclopentadienyl) Ruthenium(Ru(EtCp)2), please feel free to contact us via email or WhatsApp.
